Diploma Semiconductor Devices
Replenishment date: 30.01.2009
Content: 90130144408677.zip (25.79 KB)
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Description
GRADUATE WORK
"RESEARCH OF VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR DEVICES AND LAYERED STRUCTURES"
C O D E R Z A N I E
INTRODUCTION .. 4
1. PARAMETERS AND CHARACTERISTICS OF SEMI-WIRE
CUSTOM APPLIANCES 5
1.1 Idealized static volt-ampere
characteristics of transistors. eleven
1.2 Real static current-voltage characteristics
Theistics of transimmers. 12
2. PHYSICAL PROCESSES OCCURRING IN THE INSTRUMENTS
TUNNELISTOR and BISPIN. 15
2.1 Perfect metal-semiconductor contact. 15
2.2 Real metal-semiconductor contact. twenty
2.3 Current instability in transistor
structure with a metal-semiconductor contact. 24
3. STUDY OF THE FAMILY OF VOLT-AMPERE CHARACTERISTICS
INSTRUMENTS TUNNELISTOR and BISPIN. 28
3.1 Family of current-voltage characteristics
devices with a common B-electrode (base). 28
3.2 Family of current-voltage characteristics
devices with a common A-electrode. 36
3.3 Family of current-voltage characteristics
devices with a common C-electrode. 45
4. LABORATORY WORK: "RESEARCH OF CHARACTERISTICS
AND PARAMETERS OF SEMICONDUCTOR DEVICES AND STRUCTURES ". 54
CONCLUSION 69
LIST OF REFERENCES 71
"RESEARCH OF VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR DEVICES AND LAYERED STRUCTURES"
C O D E R Z A N I E
INTRODUCTION .. 4
1. PARAMETERS AND CHARACTERISTICS OF SEMI-WIRE
CUSTOM APPLIANCES 5
1.1 Idealized static volt-ampere
characteristics of transistors. eleven
1.2 Real static current-voltage characteristics
Theistics of transimmers. 12
2. PHYSICAL PROCESSES OCCURRING IN THE INSTRUMENTS
TUNNELISTOR and BISPIN. 15
2.1 Perfect metal-semiconductor contact. 15
2.2 Real metal-semiconductor contact. twenty
2.3 Current instability in transistor
structure with a metal-semiconductor contact. 24
3. STUDY OF THE FAMILY OF VOLT-AMPERE CHARACTERISTICS
INSTRUMENTS TUNNELISTOR and BISPIN. 28
3.1 Family of current-voltage characteristics
devices with a common B-electrode (base). 28
3.2 Family of current-voltage characteristics
devices with a common A-electrode. 36
3.3 Family of current-voltage characteristics
devices with a common C-electrode. 45
4. LABORATORY WORK: "RESEARCH OF CHARACTERISTICS
AND PARAMETERS OF SEMICONDUCTOR DEVICES AND STRUCTURES ". 54
CONCLUSION 69
LIST OF REFERENCES 71